IRG4PH50S-EPBF

PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel VCES =1200V VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM VGE EARV PD @ TC =25° PD @ TC =100° TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current cPulsed Collector Current dClamped Inductive Load Current Gate-to-Emitter Voltage eTransient Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. C GC E TO-247AD IRG4PH50S-EPbF Max. 1200 57 33 114 114 ± 20 ± 30 270 200 80 -55 to + 150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Min. — — — — ...