IRG4PSH71UDPBF

PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching C VCES = 1200V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than G VCE(on) typ. = 2.52V prior generations Industry-benchmark Super-247 package with higher power handling capability compared to E n-channel @VGE = 15V, IC = 50A same footprint TO-247 Creepage distance increased to 5.35mm Lead-Free Benefits Generation 4 IGBT's offer highest efficiencies available Maximum power density, twice the power handling of the TO-247, less space than TO-264 IGBTs optimized for specific application conditions Cost and space saving in designs that require SUPER - 247 multiple, paralleled IGBTs HEXFREDTM antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings Parameter Max. Units VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE IF @ Tc = 100°C IFM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current ÙPulse Collector Current dClamped Inductive Load current Gate-to-Emitter Voltage Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and St...