IRG7PG35UPbF IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features Low VCE (ON) trench IGBT technology Low ...
IRG7PG35UPbF IRG7PG35U-EPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package
C
G E
n-channel C
VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V@ IC = 20A
C
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
Applications
U.P.S. Welding Solar Inverter Induction heating
GCE
IRG7PG35UPbF TO-247AC
GC E
IRG7PG35U-EPbF TO-247AD
G Gate
C Collector
E Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG35UPbF IRG7PG35U-EPbF
TO-247AC TO-247AD
Tube Tube
25 IRG7PG35UPbF 25 IRG7PG35U-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temp...