IRG7PG35U-EPbF

  IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package  C G E n-channel  C   VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ. = 1.9V@ IC = 20A C Benefits  High efficiency in a wide range of applications  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation Applications  U.P.S.   Welding   Solar Inverter   Induction heating  GCE IRG7PG35UPbF TO-247AC GC E IRG7PG35U-EPbF TO-247AD G Gate C Collector E Emitter Base part number Package Type Standard Pack Form Quantity Orderable Part Number IRG7PG35UPbF IRG7PG35U-EPbF TO-247AC TO-247AD Tube Tube 25 IRG7PG35UPbF 25 IRG7PG35U-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current (Silicon Limited) IC @ TC = 100°C Continuous Collector Current (Silicon Limited) ICM Pulse Collector Current, VGE = 15V  ILM Clamped Inductive Load Current, VGE = 20V  VGE Continuous Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temp...