IRG7PG42UDPBF

  IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Ultra fast soft recovery co-pak diode  Tight parameter distribution  Lead-free package Benefits  High efficiency in a wide range of applications  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation Applications  U.P.S.   Welding   Solar Inverter   Induction heating   C G E n-channel C   VCES = 1000V IC = 45A, TC = 100°C TJ(MAX) = 150°C VCE(ON) typ. = 1.7V @ IC = 30A C GCE IRG7PG42UDPbF TO-247AC   GC E IRG7PG42UD-EPbF TO-247AD G Gate C Collector E Emitter Base part number Package Type Standard Pack Form Quantity Orderable Part Number IRG7PG42UDPbF IRG7PG42UD-EPbF TO-247AC TO-247AD Tube Tube 25 IRG7PG42UDPbF 25 IRG7PG42UD-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current (Silicon Limited) IC @ TC = 100°C Continuous Collector Current (Silicon Limited) ICM Pulse Collector Current, VGE = 15V  ILM Clamped Inductive Load Current, VGE = 20V  IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current  VGE Continuo...