NST65010MW6

NST65010MW6 Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. Complementary NPN equivalent NST65011MW6T1G is available. Features Current Gain Matching to 10% Base−Emitter Voltage Matched to ≤ 2 mV Drop−In Replacement for Standard Device NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −65 V Collector −Base Voltage VCBO −80 V Emitter −Base Voltage VEBO −5.0 V Collector Current − Continuous IC −100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C Symbol PD Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR−5 = 1.0 x 0.75 x 0.062 in. ...