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NTSV30H100ECT Dataheets PDF



Part Number NTSV30H100ECT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Very Low Forward Voltage Trench-based Schottky Rectifier
Datasheet NTSV30H100ECT DatasheetNTSV30H100ECT Datasheet (PDF)

NTSV30H100ECT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.471 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • Low Thermal Resistance • High Surge Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli.

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NTSV30H100ECT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.471 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • Low Thermal Resistance • High Surge Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display • High Frequency and DC−DC Converters • Freewheeling and OR−ing Diodes • Reverse Battery Protection • Instrumentation Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec www.onsemi.com PIN CONNECTIONS 1 2, 4 3 4 1 23 TO−220AB CASE 221A STYLE 6 MARKING DIAGRAM AY WW TSV30H10EG AKA A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 1 1 Publication Order Number: NTSV30H100ECT/D NTSV30H100ECT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 116°C) (Rated VR, TC = 136°C) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 109°C) (Rated VR, Square Wave, 20 kHz, TC = 133°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Per device Per diode Per device Per diode VRRM VRWM VR IF(AV) IFRM IFSM 100 30 15 60 30 125 V A A A Operating Junction Temperature TJ −40 to +175 °C Storage Temperature Tstg −40 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Typical Thermal Resistance Rating Junction−to−Case Junction−to−Ambient Symbol RRqqJJCA Value 1.4 47 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) vF 0.544 − 0.606 − 0.761 0.9 V (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) 0.471 0.539 0.662 − − 0.73 IR 1.7 2.1 mA mA (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) − 85 mA 5.0 16 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NTSV30H100ECTG Package TO−220AB (Pb−Free) Shipping 50 Units / Rail www.onsemi.com 2 iF, INSTANTANEOUS FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) NTSV30H100ECT TYPICAL CHARACTERISTICS 100 100 iF, INSTANTANEOUS FORWARD CURRENT (A) TA = 175°C 10 TA = 150°C TA = 125°C TA = 25°C 1.0 TA = −40°C TA = 175°C 10 TA = 150°C TA = 125°C 1.0 TA = 25°C TA = −40°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 1.E+00 IR, INSTANTANEOUS REVERSE CURRENT (A) 1.E−01 1.E−02 1.E−03 TA = 175°C TA = 150°C TA = 125°C 1.E−01 1.E−02 1.E−03 TA = 175°C TA = 150°C TA = 125°C 1.E−04 1.E−05 1.E−06 TA = 25°C 1.E−04 1.E−05 1.E−06 TA = 25°C 1.E−07 1.E−07 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Characteristics 10k TJ = 25°C 1k 100 0.1 1 10 VR, REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance 100 IF(AV), AVERAGE FORWARD CURRENT (A) 30 25 DC 20 Square Wave 15 RqJC = 1.42°C/W 10 5 040 60 80 100 120 140 160 180 TC, CASE TEMPERATURE (°C) Figure 6. Current Derating per Leg C, JUNCTION CAPACITANCE (pF) www.onsemi.com 3 IF(AV), AVERAGE FORWARD CURRENT (A) NTSV30H100ECT TYPICAL CHARACTERISTICS 60 55 50 45 40 35 30 25 20 15 10 5 0 40 dc Square Wave RqJC = 1.42°C/W 60 80 100 120 140 160 180 PF(.


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