Document
NTSV30H100ECT
Very Low Forward Voltage Trench-based Schottky Rectifier
Exceptionally Low VF = 0.471 V at IF = 5 A
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • Low Thermal Resistance • High Surge Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters • Freewheeling and OR−ing Diodes • Reverse Battery Protection • Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
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PIN CONNECTIONS 1
2, 4 3
4
1 23
TO−220AB CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW TSV30H10EG
AKA
A Y WW AKA G
= Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number: NTSV30H100ECT/D
NTSV30H100ECT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 116°C) (Rated VR, TC = 136°C) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 109°C) (Rated VR, Square Wave, 20 kHz, TC = 133°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Per device Per diode Per device Per diode
VRRM VRWM
VR IF(AV)
IFRM
IFSM
100
30 15 60 30 125
V A A A
Operating Junction Temperature
TJ
−40 to +175
°C
Storage Temperature
Tstg −40 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Typical Thermal Resistance
Rating Junction−to−Case
Junction−to−Ambient
Symbol RRqqJJCA
Value 1.4 47
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C)
vF 0.544
−
0.606
−
0.761
0.9
V
(IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C)
0.471 0.539 0.662
− − 0.73
IR 1.7 2.1
mA mA
(Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C)
− 85 mA 5.0 16 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION Device
NTSV30H100ECTG
Package TO−220AB (Pb−Free)
Shipping 50 Units / Rail
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iF, INSTANTANEOUS FORWARD CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
NTSV30H100ECT
TYPICAL CHARACTERISTICS
100 100
iF, INSTANTANEOUS FORWARD CURRENT (A)
TA = 175°C
10
TA = 150°C TA = 125°C
TA = 25°C 1.0
TA = −40°C
TA = 175°C 10 TA = 150°C
TA = 125°C
1.0 TA = 25°C
TA = −40°C
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward Characteristics
1.E+00
1.E+00
IR, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01 1.E−02 1.E−03
TA = 175°C
TA = 150°C TA = 125°C
1.E−01 1.E−02 1.E−03
TA = 175°C TA = 150°C
TA = 125°C
1.E−04 1.E−05 1.E−06
TA = 25°C
1.E−04 1.E−05 1.E−06
TA = 25°C
1.E−07
1.E−07
0 10 20 30 40 50 60 70 80 90 100
0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Characteristics
10k TJ = 25°C
1k
100 0.1
1 10 VR, REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance
100
IF(AV), AVERAGE FORWARD CURRENT (A)
30
25 DC 20
Square Wave 15
RqJC = 1.42°C/W
10
5
040 60 80 100 120 140 160 180 TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Leg
C, JUNCTION CAPACITANCE (pF)
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IF(AV), AVERAGE FORWARD CURRENT (A)
NTSV30H100ECT
TYPICAL CHARACTERISTICS
60 55 50 45 40 35 30 25 20 15 10
5 0
40
dc Square Wave
RqJC = 1.42°C/W
60 80 100 120 140 160 180
PF(.