PHD13003C

PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits „ Fast switching „ High typical DC current gain „ High voltage capability „ Integrated anti-parallel E-C diode 1.3 Applications „ Compact fluorescent lamps (CFL) „ Low power electronic lighting ballasts „ Off-line self-oscillating power supplies (SOPS) for battery charging 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current DC Ptot total power Tlead ≤ 25 °C; see Figure 1 dissipation VCESM collector-emitter VBE = 0 V peak voltage Static characteristics hFE DC current gain IC = 0.5 A; VCE = 2 V; Tj = 25 °C Min Typ Max Unit - - 1.5 A - - 2.1 W - - 700 V 8 17 25 NXP Semiconductors PHD13003C NPN power transistor with integrated diode 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description B base C collector E emitter Simplified outline Graphic symbol C B 3. Ordering information 321 SOT54 (TO-92) E sym131 Table 3. Ordering information Type number Package Name PHD13003C TO-92 4. Limiting values Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Table 4. Limiting values In accordance with the Absolute Maximum Rating S...