PMMT491A

DISCRETE SEMICONDUCTORS DATA SHEET PMMT491A NPN BISS transistor Product data sheet Supersedes data of 2001 Jun 11 2004 Jan 13 NXP Semiconductors NPN BISS transistor Product data sheet PMMT491A FEATURES High current (max. 1 A) Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS Battery powered units where high current and low power consumption are important. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. MARKING TYPE NUMBER PMMT491A MARKING CODE(1) 9A* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PMMT491A NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 13 2 MIN. − − − − − − − −65 − −6...