SFT1202

Ordering number : ENA1169A SFT1202 Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA http://onsemi.com Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage High allowable power dissipation Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings Unit 180 V 180 V 150 V 7V 2A 3A 400 mA Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7518-003 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 0.5 SFT1202-E 6.5 5.0 2.3 0.5 SFT1202-TL-E 44 0.8 5.5 1.5 2.5 7.0 1.2 5.5 1.5 7.0 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP 0.85 123 0.6 2.3 2.3 0.5 0 to 0.2 1.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA Product & Package Information Package : TP JEITA, JEDEC : SC-64, TO-251 Minimum ...