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DMN53D0L Dataheets PDF



Part Number DMN53D0L
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMN53D0L DatasheetDMN53D0L Datasheet (PDF)

NEW PRODUCT DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. SOT23 Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage.

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NEW PRODUCT DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. SOT23 Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected to 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate) D ESD protected Top View GS Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN53D0L-7 DMN53D0L-13 Case SOT23 SOT23 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Chengdu A/T Site Date Code Key Year Code Month Code 2014 B Jan 1 Feb 2 Shanghai A/T Site 2015 C Mar 3 2016 D Apr May 45 53E = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 2017 E Jun Jul 67 2018 F Aug 8 Sep 9 2019 G Oct O 2020 H Nov Dec ND DMN53D0L Document number: DS37029 Rev. 2 - 2 1 of 5 www.diodes.com May 2014 © Diodes Incorporated NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain Source Voltage Gate-Source Voltage Drain Current (Note 6) Characteristic Symbol VDSS VGSS ID DMN53D0L Value 50 ±20 500 Unit V V mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 370 344 540 236 -55 to +150 Unit mW °C/W mW °C/W .


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