Document
NEW PRODUCT
DMN53D0L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V
ID TA = +25°C
500 mA
200 mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
SOT23
Features and Benefits
• N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected to 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate)
D
ESD protected
Top View
GS Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN53D0L-7 DMN53D0L-13
Case SOT23 SOT23
Packaging 3000/Tape & Reel 10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Date Code Key Year Code
Month Code
2014 B
Jan 1
Feb 2
Shanghai A/T Site
2015 C
Mar 3
2016 D
Apr May 45
53E = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September)
2017 E
Jun Jul 67
2018 F
Aug 8
Sep 9
2019 G
Oct O
2020 H
Nov Dec ND
DMN53D0L
Document number: DS37029 Rev. 2 - 2
1 of 5 www.diodes.com
May 2014
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain Source Voltage Gate-Source Voltage Drain Current (Note 6)
Characteristic
Symbol VDSS VGSS ID
DMN53D0L
Value 50 ±20 500
Unit V V mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range
Symbol PD RθJA PD RθJA
TJ, TSTG
Value 370 344 540 236
-55 to +150
Unit mW °C/W mW °C/W .