Document
DMN61D8LVTQ
INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER
Product Summary
BVDSS 60V
RDS(ON) max
1.8Ω @ VGS = 5V 2.4Ω @ VGS = 3V
ID max TA = +25°C
630mA
Description and Applications
DMN61D8LVTQ provides a single component solution for switching inductive loads such as relays, solenoids, and small DC motors in automotive applications, without the need of a freewheeling diode. DMN61D8LVTQ accepts logic level inputs, thus allowing it to be driven by logic gates, inverters and microcontrollers. It is ideally suited for door, window and antenna relay coils.
ESD Protected Gate
Features and Benefits
Provides a reliable and robust interface between sensitive logic and DC relay coils
Replaces 3 to 4 discrete components enabling PCB footprint to be reduced
Internal active clamp removes the need for external zener diode Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Mechanical Data
Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (Approximate)
TSOT26
Top View
Top View Internal Schematic
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number DMN61D8LVTQ-7 DMN61D8LVTQ-13
Case TSOT26 TSOT26
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TSOT26
1D8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2016 D
Jan Feb 12
DMN61D8LVTQ
Document number: DS37822 Rev. 3 - 2
2017 E
Mar 3
2018 F
Apr May 45
2019 G
Jun Jul 67
1 of 7 www.diodes.com
2020 H
Aug 8
Sep 9
2021 I
Oct O
2022 J
Nov Dec ND
December 2016
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7)
Steady State
Maximum Continuous Body Diode Forward Current (Note 7)
TA = +25°C TA = +70°C
Single Pulse Drain-to-Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C)
Peak Power Dissipation, Drain-to-Source (Non repetitive current square
pulse 1.0ms duration) (TJ Initial = +85°C) Load Dump Pulse, Drain-to-Source, RSOURCE = 0.5Ω, t = 300ms) (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C) Inductive Switching Transient 1, Drain-to-Source (Waveform: RSOURCE = 10Ω, t = 2.0ms) (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C) Inductive Switching Transient 2, Drain-to-Source (Waveform: RSOURCE = 4.0Ω, t = 50µs) (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C) Reverse Battery, 10 Minutes (Drain-to-Source) (For Relay’s Coils/Inductive Loads of 80Ω or more)
Dual Voltage Jump Start, 10 Minutes (Drain-to-Source)
ESD Human Body Model (HBM)
Symbol VDSS VGSS ID IS EZ PPK ELD1
ELD2
ELD3
Rev−Bat Dual−Volt
ESD
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Total Power Dissipation (Note 6)
PD
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
Total Power Dissipation (Note 7)
PD
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
RθJA
Operating and Storage Temperature Range
TJ, TSTG
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided.
DMN61D8LVTQ
Value 60 ±12 630 500 0.5 200
20 60
100
300
-14 28 4,000
Units V V mA A mJ W V
V
V
V V V
Value 820 154 1,090 116 -55 to +150
Units mW °C/W mW °C/W °C
DMN61D8LVTQ
Document number: DS37822 Rev. 3 - 2
2 of 7 www.diodes.com
December 2016
© Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage
Symbol Min
BVDSS
60
Typ
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
ON CHARACTERI.