DMN61D9UDW

NEW PRNOEDWUCPTRODUCT DMN61D9UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V ID max TA = +25°C 350mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  Power Management Functions SOT363 Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Up To 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT363  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.006 grams (Approximate) D1 D2 D2 G1 S1 G1 G2 ESDProtected up to 2kV Top View Gate Protection Diode S1 Gate Protection Diode S2 Q1 N-Channel Q2 N-Channel Equivalent Circuit S2 G2 D1 Top View Pin out Ordering Information (Note 4) Notes: Part Number DMN61D9UDW-7 DMN61D9UDW-13 Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/T...