DatasheetsPDF.com

DMNH4011SK3 Dataheets PDF



Part Number DMNH4011SK3
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMNH4011SK3 DatasheetDMNH4011SK3 Datasheet (PDF)

A D V A N C E DNIEN FWOPRRMOADT IU COTN Product Summary BVDSS 40V RDS(ON) Max 10mΩ @ VGS = 10V DMNH4011SK3 Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET ID TC = +25°C 50A Features and Benefits  Rated to +175C – ideal for high ambient temperature environments  Low On-Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applicatio.

  DMNH4011SK3   DMNH4011SK3



Document
A D V A N C E DNIEN FWOPRRMOADT IU COTN Product Summary BVDSS 40V RDS(ON) Max 10mΩ @ VGS = 10V DMNH4011SK3 Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET ID TC = +25°C 50A Features and Benefits  Rated to +175C – ideal for high ambient temperature environments  Low On-Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  DC-DC Converters  Power Management Functions  Analog Switch Mechanical Data  Case: TO252 (DPAK)  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.33 grams (Approximate) TO252 D D G Top View D GS Top View Pin Out S Internal Schematic Ordering Information (Note 4) Notes: Part Number DMNH4011SK3-13 Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H4011S YYWW =Manufacturer’s Marking H4011S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) DMNH4011SK3 Document number: DS37403 Rev. 2 - 2 1 of 6 www.diodes.com July 2015 © Diodes Incorporated A D V A N C E DNIEN FWOPRRMOADT IU COTN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) Steady State TC = +25°C TC = +100°C Symbol VDSS VGSS ID IS IDM DMNH4011SK3 Value 40 ±20 50 27 120 120 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJC TJ, TSTG Value 2.6 47 50 3 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR Min 40   2                Typ      0.9 1,405 247 108 2.2 25.5 4.6 6.9 4.6 3.7 16 5.1 22.1 13.4 Max  1 ±100 4 10 1.2              Unit Test Condition V VGS = 0V, ID = 250µA µA VDS = 40V, VGS = 0V nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250µA mΩ VGS = 10V, ID = 50A V VGS = 0V, IS = 20A pF VDS = 20V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 20V, VGS = 10V , ID = 50A ns VDD = 20V, VGS = 10V, ID = 50A, RG = 3.5Ω ns nC IF = 50A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMNH4011SK3 Document number: DS37403 Rev. 2 - 2 2 of 6 www.diodes.com July 2015 © Diodes Incorporated ID, DRAIN CURRENT (A) A D V A N C E DNIEN FWOPRRMOADT IU COTN RDS(ON), DRAIN-SOURCE ON-RESISTANCE (MΩ) 50.0 40.0 30.0 VGS=4.5V VGS=5.0V VGS=6.0V VGS=10.0V VGS=4.0V 20.0 10.0 0.0 0 VGS=3.5V VGS=3.0V 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 10.00 9.50 9.00 8.50 VGS=10.0V 8.00 7.50 7.00 6.50 6.00 5 10 15 20 25 30 35 40 45 50 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and G.


DMNH4006SK3 DMNH4011SK3 DMT6004LPS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)