Document
A D V A N C E DNIEN FWOPRRMOADT IU COTN
Product Summary
BVDSS 40V
RDS(ON) Max 10mΩ @ VGS = 10V
DMNH4011SK3
Green
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
ID TC = +25°C
50A
Features and Benefits
Rated to +175C – ideal for high ambient temperature environments
Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
DC-DC Converters Power Management Functions Analog Switch
Mechanical Data
Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate)
TO252
D
D
G
Top View
D
GS Top View Pin Out
S
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMNH4011SK3-13
Case TO252
Packaging 2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H4011S
YYWW
=Manufacturer’s Marking H4011S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53)
DMNH4011SK3
Document number: DS37403 Rev. 2 - 2
1 of 6 www.diodes.com
July 2015
© Diodes Incorporated
A D V A N C E DNIEN FWOPRRMOADT IU COTN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Steady State
TC = +25°C TC = +100°C
Symbol VDSS VGSS
ID
IS IDM
DMNH4011SK3
Value 40 ±20
50 27
120 120
Unit V V
A
A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
Symbol PD RJA PD RJC
TJ, TSTG
Value 2.6 47 50 3
-55 to +175
Unit W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH) RDS(ON)
VSD
Ciss Coss Crss RG Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR QRR
Min
40
2
Typ
0.9
1,405 247 108 2.2 25.5 4.6 6.9 4.6 3.7 16 5.1 22.1 13.4
Max
1 ±100
4 10 1.2
Unit
Test Condition
V VGS = 0V, ID = 250µA µA VDS = 40V, VGS = 0V nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA mΩ VGS = 10V, ID = 50A
V VGS = 0V, IS = 20A
pF VDS = 20V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 20V, VGS = 10V , ID = 50A
ns
VDD = 20V, VGS = 10V, ID = 50A, RG = 3.5Ω
ns nC
IF = 50A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
DMNH4011SK3
Document number: DS37403 Rev. 2 - 2
2 of 6 www.diodes.com
July 2015
© Diodes Incorporated
ID, DRAIN CURRENT (A)
A D V A N C E DNIEN FWOPRRMOADT IU COTN
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (MΩ)
50.0 40.0 30.0
VGS=4.5V VGS=5.0V
VGS=6.0V VGS=10.0V
VGS=4.0V
20.0
10.0
0.0 0
VGS=3.5V
VGS=3.0V
0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic
3
10.00
9.50
9.00 8.50
VGS=10.0V
8.00
7.50
7.00
6.50
6.00 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current
and G.