N-Channel MOSFET
ADAVDAVNACNECDEI INNNFEFOWORRPMRMAOATIDTIOUONCNT
DMT6010LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVD...
Description
ADAVDAVNACNECDEI INNNFEFOWORRPMRMAOATIDTIOUONCNT
DMT6010LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) max 8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V
ID max TA = 25°C
14.0A
11.5A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
Backlighting Power Management Functions DC-DC Converters
Mechanical Data
Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate)
SO-8 Top View
SD
SD
SD
GD
Top View Internal Schematic
D
G S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMT6010LSS-13
Case SO-8
Packaging 2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.dio...
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