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F1100 Dataheets PDF



Part Number F1100
Manufacturers Integrated Device Technology
Logo Integrated Device Technology
Description RF to IF Dual Downconverting Mixer
Datasheet F1100 DatasheetF1100 Datasheet (PDF)

RF to IF Dual Downconverting Mixer GENERAL DESCRIPTION This document describes the specifications for the IDTF1100 Zero-DistortionTM RF to IF Downconverting Mixer. This device is part of a series of downconverting mixers covering all UTRA bands. See the Part# Matrix for the details of all devices in the series. The F1100 dual channel device operates with a single 5V supply. It is optimized for operation in a Multicarrier BaseStation Receiver for RF bands from 698 to 915 MHz with High Side Inject.

  F1100   F1100



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RF to IF Dual Downconverting Mixer GENERAL DESCRIPTION This document describes the specifications for the IDTF1100 Zero-DistortionTM RF to IF Downconverting Mixer. This device is part of a series of downconverting mixers covering all UTRA bands. See the Part# Matrix for the details of all devices in the series. The F1100 dual channel device operates with a single 5V supply. It is optimized for operation in a Multicarrier BaseStation Receiver for RF bands from 698 to 915 MHz with High Side Injection. IF frequencies from 150 to 450 MHz are supported. Nominally, the device offers +41 dBm Output IP3 with 350 mA of ICC. COMPETITIVE ADVANTAGE In typical basestation receivers the mixer limits the linearity performance for the entire receive system. The F1100 with Zero-Distortion technology dramatically improves the maximum IM3 interference that the BTS can withstand at a desired Signal to Noise Ratio (SNR.) IP3O: ⇑ 7 dB Allows for higher RF gain improving Sensitivity PART# MATRIX Part# F1100 F1102 F1150 F1152 F1162 RF freq range 698 - 915 400 - 1000 1700 - 2200 1400 - 2200 2300 – 2700 UTRA bands 5,6,8,12,13,14,17 ,19,20 5,6,8,12,13,14,17 ,19,20 1,2,3,4,9,10, 33, 34,35, 36, 37,39 1,2,3,4,9,10, 211, 241, 33, 34,35, 36, 37,39 7,38,40,41 IF freq range 150 - 450 50 - 300 50 - 450 50 - 350 50 – 500 Typ. Gain 9 Injection High Side 9.0 Both 8.5 High Side 8.5 Low Side 8.8 Both 1 – with High side injection F1100 DATASHEET 698 - 915 MHz F1100NBGI FEATURES • Dual Path for Diversity Systems • Ideal for Multi-Carrier Systems • MIMO friendly: -6 dBm min LO drive • 9 dB Gain • Ultra linear: +41 dBm IP3O (350 MHz IF) • Low NF ~10 dB • 200 Ω output impedance • Ultra high +13 dBm P1dBI • Pin Compatible w/Existing solutions • 6x6 36 pin package • Power Down mode • Standard Mode: ICC = 350 mA DEVICE BLOCK DIAGRAM RFIN_A RF VCO RFIN_B IFOUT_A Bias Control STBY 2 LOADJ IFOUT_B ORDERING INFORMATION Omit IDT prefix 0.8 mm height package Tape & Reel IDTF1100NBGI8 RF product Line Green Industrial Temp range IDT Zero-DistortionTM Mixer 1 RevO, Feb 2013 RF to IF Dual Downconverting Mixer ABSOLUTE MAXIMUM RATINGS VCC to GND STBY IF_A+, IF_B+, IF_A-, IF_B-, LO1_ADJ, LO2_ADJ LO_IN, LO_IN_ALT, RF_A, RF_B IF_BiasA, IF_BiasB to GND RF Input Power (RF_A, RF_B) Continuous Power Dissipation θJA (Junction – Ambient) θJC (Junction – Case) The Case is defined as the exposed paddle Operating Temperature Range (Case Temperature) Maximum Junction Temperature Storage Temperature Range Lead Temperature (soldering, 10s) . F1100 DATASHEET 698 - 915 MHz F1100NBGI -0.3V to +5.5V -0.3V to (VCC_ + 0.3V) -0.3V to (VCC_ + 0.3V) -0.3V to +0.3V -0.3V to +0.3V +20dBm 2.2W +35°C/W +2.5°C/W TC = -40°C to +100°C 150°C -65°C to +150°C +260°C Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to a.


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