DatasheetsPDF.com

NTSV20120CT Dataheets PDF



Part Number NTSV20120CT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Very Low Forward Voltage Trench-based Schottky Rectifier
Datasheet NTSV20120CT DatasheetNTSV20120CT Datasheet (PDF)

NTSV20120CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.557 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • Low Thermal Resistance • High Surge Capability • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Ty.

  NTSV20120CT   NTSV20120CT


Document
NTSV20120CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.557 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • Low Thermal Resistance • High Surge Capability • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Typical Applications • Switching Power Supplies including Notebook/Netbook Adapters, ATX and Flat Panel Display • High Frequency and DC−DC Converters • Freewheeling and OR−ing Diodes • Reverse Battery Protection • Instrumentation Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec http://onsemi.com PIN CONNECTIONS 1 2, 4 3 4 1 2 3 TO−220 CASE 221A STYLE 6 MARKING DIAGRAM AY WW TSV20120Cx AKA A Y WW AKA x G H = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package ORDERING INFORMATION Device Package Shipping NTSV20120CTG TO−220 (Pb−Free) 50 Units / Rail © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 1 1 Publication Order Number: NTSV20120CT/D NTSV20120CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 115°C) Per Device Per Diode VRRM VRWM VR IF(AV) 120 20 10 V A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 110°C) Per Device Per Diode IFRM 40 20 A Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A Operating Junction Temperature TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Rating Symbol RqJC RqJA Value 2.0 70 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) vF 0.654 − 0.874 1.12 V (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (VR = 90 V, TJ = 125°C) 0.557 0.650 − 0.86 IR 5.8 4.9 mA mA (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) 16.1 700 mA 8.9 100 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 iF, INSTANTANEOUS FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) NTSV20120CT TYPICAL CHARACTERISTICS 100 100 IR, INSTANTANEOUS REVERSE CURRENT (mA) TA = 150°C TA = 25°C TA = 150°C 10 10 TA = 125°C 1 TA = 125°C 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics 1.8 0.01 TA = 25°C 0.001 20 30 40 50 60 70 80 90 100 110 120 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 2. Typical Reverse Characteristics 10,000 1000 TJ = 25°C 20 15 dc RqJC = 1.3°C/W 10 Square Wave 100 5 IF(AV), AVERAGE FORWARD CURRENT (A) 10 0.1 1 10 VR, REVERSE VOLTAGE (V) Figure 3. Typical Junction Capacitance 100 40 35 dc 30 RqJC = 1.3°C/W 25 Square Wave 20 15 10 5 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 4. Current Derating per Leg 30 IPK/IAV = 20 IPK/IAV = 10 25 20 IPK/IAV = 5 15 Square Wave 10 dc 5 TJ = 150°C 0 0 2 4 6 8 10 12 14 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation IF(AV), AVERAGE FORWARD CURRENT (A) http://onsemi.com 3 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) NTSV20120CT TYPICAL CHARACTERISTICS 10 1 50% 20% 10% 0.1 5% 2% 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 7. Typical Transient Thermal Response P(pk) t1 t2 DUTY CYCLE, D = t1/t2 10 100 1000 http://onsemi.com 4 NTSV20120CT PACKAGE DIMENSIONS BF Q H Z 4 1 23 A K L V G N D TO−220 CASE 221A−09 ISSUE AH −T− SEATING PLANE C TS U R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DI.


NTSJ40200CTG NTSV20120CT NTSW60200CTG


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)