NVJS4151P

NVJS4151P MOSFET – Power, Single P-Channel, Trench, SC-88 -20 V, -4.1 A Features Leading Trench Technology for Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 Gate Diodes for ESD Protection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady TA = 25 °C ID State TA = 85 °C −3.2 A −2.3 t ≤ 5 s TA = 25 °C −4.1 Power Dissipation (Note 1) Steady TA = 25 °C PD State 1.2 W Pulsed Drain Current tp = 10 ms IDM −13 A Operating Junction and Storage Temperature TJ, −55 to °C TSTG 150 Source Current (Body Diode) IS −0.8 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C ESD Human Body Model (HBM) ESD 4000 V THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit Junction−to−Ambient – Steady State RqJA 125 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 75 Junction−to−Lead – Steady State RqJL 45 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may ...