2SK4124

Ordering number : ENA0746C 2SK4124 N-Channel Power MOSFET 500V, 20A, 430mΩ, TO-3P-3L http://onsemi.com Features Low ON-resistance, low input capacitance, ultrahigh-speed switching Adoption of high reliability HVP process Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (Our ideal heat dissipation condition)*1 500 V ±30 V 20 A 60 A 2.5 W 170 W 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV *1 Our condition is radiation from backside. 110 mJ 20 A The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=50V, L=500μH, IAV=20A (Fig.1) *3 L≤500μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7539-002 15.6 4.8 1.5 2SK4124-1E 3.2 7.0 16.76 10.0 3.5 5.0 20.0 19.9 18.4 2.0 3.0 1.0 123 5.45 5.45 1.4 13.6 0.6 1 : Gate 2 : Drain 3 : Source TO-3P-3L Product ...