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ATP202 Dataheets PDF



Part Number ATP202
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet ATP202 DatasheetATP202 Datasheet (PDF)

Ordering number : ENA1317A ATP202 N-Channel Power MOSFET 30V, 50A, 12mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanch.

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Ordering number : ENA1317A ATP202 N-Channel Power MOSFET 30V, 50A, 12mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 30 ±20 50 150 40 150 --55 to +150 45 25 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP202-TL-H 4.6 2.6 0.4 Product & Package Information • Package : ATPAK • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP202 LOT No. TL 6.05 0.7 4.6 1.7 7.3 0.5 9.5 0.5 0.1 2 1 0.8 3 0.6 2.3 2.3 0.55 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK Electrical Connection 2,4 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 61312 TKIM/91708PA TIIM TC-00001568 No. A1317-1/7 ATP202 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=25A ID=25A, VGS=10V ID=13A, VGS=4.5V VDS=10V, f=1MHz See specified Test Circuit. VDS=15V, VGS=10V, ID=50A IS=50A, VGS=0V Switching Time Test Circuit VIN 10V 0V VIN PW=10μs D.C.≤1% G VDD=15V ID=25A RL=0.6Ω D VOUT ATP202 P.G 50Ω S min 30 Ratings typ 1.2 10 17 9 14 1650 285 160 16 185 93 93 27 7.5 4 0.97 max 1 ±10 2.6 12 20 1.2 Unit V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Ordering Information Device ATP202-TL-H Package ATPAK Shipping 3,000pcs./reel memo Pb Free and Halogen Free No. A1317-2/7 Drain Current, ID -- A 16.0V 10.0V 6.8.00VV ATP202 70 Tc=25°C 60 ID -- VDS 4.5V 50 4.0V 40 30 VGS=3.5V 20 10 0 0 0.5 1.0 1.5 2.0 Drain-Rto-DSSou(rocenV) ol-t-ageV, GVDSS -- V IT14012 30 Tc=25°C Single pulse 25 ID=13A 20 25A 15 10 Drain Current, ID -- A Tc= --25°C 25°C 75°C .


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