Document
Ordering number : ENA1317A
ATP202
N-Channel Power MOSFET
30V, 50A, 12mΩ, Single ATPAK
http://onsemi.com
Features
• Low ON-resistance • 4.5V drive • Halogen free compliance
• Large current • Slim package • Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse
EAS IAV
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 30
±20 50
150 40
150 --55 to +150
45 25
Unit V V A A W °C °C mJ A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7057-001
6.5
4
1.5 0.4
ATP202-TL-H
4.6 2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP202
LOT No. TL
6.05
0.7 4.6
1.7 7.3 0.5 9.5
0.5
0.1
2 1
0.8
3 0.6
2.3 2.3
0.55 0.4
1 : Gate 2 : Drain 3 : Source 4 : Drain
ATPAK
Electrical Connection
2,4
1 3
Semiconductor Components Industries, LLC, 2013 July, 2013
61312 TKIM/91708PA TIIM TC-00001568 No. A1317-1/7
ATP202
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs |
RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=25A ID=25A, VGS=10V ID=13A, VGS=4.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=50A
IS=50A, VGS=0V
Switching Time Test Circuit
VIN 10V
0V
VIN
PW=10μs D.C.≤1%
G
VDD=15V
ID=25A RL=0.6Ω D VOUT
ATP202 P.G 50Ω S
min 30
Ratings typ
1.2 10 17
9 14 1650 285 160 16 185 93 93 27 7.5
4 0.97
max 1
±10 2.6 12 20
1.2
Unit
V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V
Ordering Information
Device ATP202-TL-H
Package ATPAK
Shipping 3,000pcs./reel
memo Pb Free and Halogen Free
No. A1317-2/7
Drain Current, ID -- A 16.0V 10.0V 6.8.00VV
ATP202
70
Tc=25°C
60
ID -- VDS
4.5V
50
4.0V
40
30
VGS=3.5V
20
10
0 0 0.5 1.0 1.5 2.0
Drain-Rto-DSSou(rocenV) ol-t-ageV, GVDSS -- V IT14012
30
Tc=25°C Single pulse
25
ID=13A
20
25A
15
10
Drain Current, ID -- A
Tc= --25°C 25°C 75°C
.