ATP208

Ordering number : ENA1396A ATP208 N-Channel Power MOSFET 40V, 90A, 6mΩ, Single ATPAK http://onsemi.com Features Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=15V, L=100μH, IAV=45A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 40 ±20 90 270 60 150 --55 to +150 155 45 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP208-TL-H 4.6 2.6 0.4 Product & Package Information Package : ATPAK JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP208 LOT No. TL 6.05 0.7 4.6 1.7 7.3 0.5 9.5 0.5 0.1 2 1 0.8 3 0.6 2.3 2.3 0.55 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK Electrical Connection 2,4 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 61312 TKIM/11409P...