BFL4004

Ordering number : ENA1796A BFL4004 N-Channel Power MOSFET 800V, 6.5A, 2.5Ω, TO-220F-3FS http://onsemi.com Features ON-resistance RDS(on)=1.9Ω (typ.) Input capacitance Ciss=710pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc*1 IDpack*2 IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *4 EAS Avalanche Current *5 IAV Note :*1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (Our ideal heat dissipation condition)*3 800 ±30 6.5 4.3 13 2.0 36 150 --55 to +150 225 6.5 V V A A A W W °C °C mJ A The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A (Fig.1) *5 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 4.7 2.54 BFL4004-1E Product & Package ...