BFL4026

Ordering number : ENA1797A BFL4026 N-Channel Power MOSFET 900V, 5A, 3.6Ω, TO-220F-3FS http://onsemi.com Features ON-resistance RDS(on)=2.8Ω (typ.) 10V drive Input capacitance Ciss=650pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc*1 IDpack*2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% 900 V ±30 V 5A 3.5 A 10 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.0 W 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 132 mJ Avalanche Current *5 IAV 5A Note :*1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=5A (Fig.1) *5 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 4.7 2.54 BFL4026-1E Product & Package Infor...