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CPH3457

ON Semiconductor

N-Channel Power MOSFET

Ordering number : ENA1804B CPH3457 N-Channel Power MOSFET 30V, 3A, 95mΩ, Single CPH3 http://onsemi.com Features • ...


ON Semiconductor

CPH3457

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Description
Ordering number : ENA1804B CPH3457 N-Channel Power MOSFET 30V, 3A, 95mΩ, Single CPH3 http://onsemi.com Features ON-resistance RDS(on)1=73mW(typ.) 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Value 30 ±12 3 12 1.0 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7015A-004 2.9 3 CPH3457-TL-H 0.15 CPH3457-TL-W Product & Package Information Package : CPH3 JEITA, JEDEC : SC-59, TO-236, SOT-23 Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking 0.9 2.8 0.2 0.6 1.6 0.6 0.2 LP LOT No. 1 0.95 2 0.4 0.05 1 : Gate 2 : Source 3 : Drain CPH3 TL Electrical Connection 3 1 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 April, 2014 42814HK TC-00003117/90110TKIM PE No. A1804-1/5 CPH3457 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-So...




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