NCE1012E

http://www.ncepower.com Pb Free Product NCE1012E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =0.6A RDS(ON) <350mΩ @ VGS=4.5V RDS(ON) <500mΩ @ VGS=2.5V ● High power and current handing capability ● Lead free product is acquired ● Gate-Source ESD protection Application ● Battery operated systems ● Load/ power switching cell phones pagers ● Power supply converter circuits Schematic diagram Marking and pin assignment SOT-523 top view Package Marking and Ordering Information Device Marking Device Device Package 1012E NCE1012E SOT-523 Reel Size Ø180mm Tape width 8 mm Quantity 3000units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Limit 20 ±10 0.6 1 150 -55 To 150 Unit V V A A mW ℃ 833 ℃/W Min Typ Max Unit 20 22 - V Wu...