N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE2004NE
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2004N...
Description
http://www.ncepower.com
Pb Free Product
NCE2004NE
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram
Application
● PWM application ● Load switch
Marking and pin assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2004NE
NCE200N4NE
SOT23-6L
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20 ±12
6 30 1.25 -55 To 150
100
Unit
V V A A W ℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain C...
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