NCE3025G

http://www.ncepower.com Pb Free Product NCE3025G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● SMPS and general purpose applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! DFN 5x6 EP top view Package Marking and Ordering Information Device Marking Device Device Package NCE3025G NCE3025G DFN 5x6 EP Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 25 17 50 30 0.24 70 -55 To 150 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb F...