NCE30H10G

http://www.ncepower.com Pb Free Product NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Marking and pin assignment Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply DFN5X6-8L top view Package Marking and Ordering Information Device Marking NCE30H10G Device NCE30H10G Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID (100℃) IDM PD TJ,TSTG Limit 30 ±20 100 70.7 300 65 0.43 -55 To 175 Unit V V A A A W W/℃ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE30H10G Thermal Characteristic Thermal Resistance,Junction-to-Cas...