VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier...
VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3080C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VFT3080C
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT3080C
PIN 1
K
PIN 2
HEATSINK
VIT3080C
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package
2 x 15 A 80 V 150 A 0.65 V
150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
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