VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
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Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3080S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VFT3080S
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
A NC
VBT3080S
NC K A HEATSINK
VIT3080S
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
Package
30 A 80 V 200 A 0.73 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations
Single die
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IF(AV) IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
EAS IRRM
VAC
Operating junction and storage temperature range
TJ, TSTG
VT3080S
VFT3080S VBT3080S VIT3080S 80 30 200 250 1.0
1500 -55 to +150
UNIT V A A mJ A
V °C
Revision: 11-Sep-13
1 Document Number: 89169
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage Instantaneous forward voltage Reverse current
IR = 1.0 mA IF = 5 A IF = 15 A IF = 30 A IF = 5 A IF = 15 A IF = 30 A
VR = 80 V
TA = 25 °C TA = 25 °C
TA = 125 °C TA = 25 °C TA = 125 °C
VBR VF (1) IR (2)
80 (minimum) 0.47 0.61 0.82 0.39 0.57 0.73 70 23
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
MAX. -
0.95 -
0.82 1000
45
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT3080S VFT3080S
Typical thermal resistance
RJC 1.5 5.0
VBT3080S 1.5
VIT3080S 1.5
UNIT V
V
µA mA
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT3080S-E3/4W
1.88
ITO-220AB
VFT3080S-E3/4W
1.75
TO-263AB
VBT3080S-E3/4W
1.37
TO-263AB
VBT3080S-E3/8W
1.37
TO-262AA
VIT3080S-E3/4W
1.46
PACKAGE CODE 4W 4W 4W 8W 4W
BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube
DELIVERY MODE Tube Tube Tube
Tape and reel Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Current (A) Average Power Loss (W)
35 Resistive or Inductive Load
30
V(B,I)T3080S
25
20 VFT3080S
15
10
5 Mounted on Specific Heatsink
0 0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
30 D = 0.5 D = 0.8
25 D = 0.3 D = 0.2
20 D = 0.1
D = 1.0
15
T 10
5
D = tp/T
tp
0 0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 11-Sep-13
2 Document Number: 89169
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Instantaneous Forward Current (A)
VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
100 TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
0.1 0
TA = 25 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100 TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
0.1 0.01
TA = 25 °C
0.001 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Transient Th.