VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3
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Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.28 V at IF = 5.0 A
TO-220AB
TMBS ®
TO-262AA K
VT4045C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VIT4045C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
2 x 20 A 45 V 240 A 0.41 V
150 °C TO-220AB, TO-262AA
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
VT4045C
VIT4045C
45
40
20
240
-40 to +150
UNIT V A
A °C
Revision: 21-Nov-13
1 Document Number: 89351
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C TA = 25 °C TA = 125 °C
VF (1) IR (2)
0.41 0.44 0.50 0.28 0.33 0.41
18
MAX.
0.58 0.50 3000 50
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode per device
RJC
VT4045C
VIT4045C
1.5
0.8
UNIT V μA mA
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT4045C-M3/4W
1.89
TO-262AA TO-220AB TO-262AA
VIT4045C-M3/4W VT4045CHM3/4W (1) VIT4045CHM3/4W (1)
1.46 1.89 1.46
Note (1) AEC-Q101 qualified
PACKAGE CODE 4W 4W 4W 4W
BASE QUANTITY 50/tube 50/tube 50/tube 50/tube
DELIVERY MODE Tube Tube Tube Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A) Average Power Loss (W)
45 40 35 30 25 20 15 10
5 0
100
110 120 130 140 Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
12
10 D = 0.5 D = 0.3
8
D = 0.2 6
D = 0.1
4
D = 0.8
D = 1.0 T
2
D = tp/T
tp
0 0 4 8 12 16 20 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 21-Nov-13
2 Document Number: 89351
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3
www.vishay.com
Vishay General Semiconductor
Instantaneous Forward Current (A)
100 TA = 150 °C
10 TA = 125 °C
1
TA = 100 °C TA = 25 °C
0.1 0
0.1 0.2 0.3 0.4 0.5 0.6 Instantaneous Forward Voltage (V)
0.7
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Junction Capacitance (pF)
100 000 10 000
TJ = 25 °C f = 1.0 MHz
Vsig = 50 mVp-p
1000
100 0.1
1 10 Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Reverse Current (mA)
100 TA = 150 °C
TA = 125 °C 10
TA = 100 °C
1
0.1 0.01
TA = 25 °C
0.001 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Transient Thermal Impedance (°C/W)
10 Junction to Case
1
0.1 0.01
0.1 1 10 t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 21-Nov-13
3 Document Number: 89351
For technical questions within your region: DiodesAmericas@vishay..