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VT4045CHM3 Dataheets PDF



Part Number VT4045CHM3
Manufacturers Vishay
Logo Vishay
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VT4045CHM3 DatasheetVT4045CHM3 Datasheet (PDF)

VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A TO-220AB TMBS ® TO-262AA K VT4045C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VIT4045C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material cat.

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VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A TO-220AB TMBS ® TO-262AA K VT4045C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VIT4045C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 45 V 240 A 0.41 V 150 °C TO-220AB, TO-262AA Diode variations Dual common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Operating junction and storage temperature range TJ, TSTG VT4045C VIT4045C 45 40 20 240 -40 to +150 UNIT V A A °C Revision: 21-Nov-13 1 Document Number: 89351 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Instantaneous forward voltage per diode IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A Reverse current per diode VR = 45 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) 0.41 0.44 0.50 0.28 0.33 0.41 18 MAX. 0.58 0.50 3000 50 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode per device RJC VT4045C VIT4045C 1.5 0.8 UNIT V μA mA UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB VT4045C-M3/4W 1.89 TO-262AA TO-220AB TO-262AA VIT4045C-M3/4W VT4045CHM3/4W (1) VIT4045CHM3/4W (1) 1.46 1.89 1.46 Note (1) AEC-Q101 qualified PACKAGE CODE 4W 4W 4W 4W BASE QUANTITY 50/tube 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube Tube  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Average Power Loss (W) 45 40 35 30 25 20 15 10 5 0 100 110 120 130 140 Case Temperature (°C) 150 Fig. 1 - Maximum Forward Current Derating Curve 12 10 D = 0.5 D = 0.3 8 D = 0.2 6 D = 0.1 4 D = 0.8 D = 1.0 T 2 D = tp/T tp 0 0 4 8 12 16 20 24 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 21-Nov-13 2 Document Number: 89351 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3 www.vishay.com Vishay General Semiconductor Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 Instantaneous Forward Voltage (V) 0.7 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Junction Capacitance (pF) 100 000 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 Reverse Voltage (V) 100 Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Transient Thermal Impedance (°C/W) 10 Junction to Case 1 0.1 0.01 0.1 1 10 t - Pulse Duration (s) 100 Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 21-Nov-13 3 Document Number: 89351 For technical questions within your region: DiodesAmericas@vishay..


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