VT2080C-E3 Schottky Rectifier Datasheet

VT2080C-E3 Datasheet, PDF, Equivalent


Part Number

VT2080C-E3

Description

Dual Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Total Page 5 Pages
Datasheet
Download VT2080C-E3 Datasheet


VT2080C-E3
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT2080C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VFT2080C
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VBT2080C
PIN 1
K
PIN 2
HEATSINK
VIT2080C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
2 x 10 A
80 V
100 A
0.60 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
VRRM
IF(AV)
IFSM
EAS
IRRM
VAC
TJ, TSTG
VT2080C
VFT2080C VBT2080C VIT2080C
80
20
10
100
110
1.0
1500
-55 to +150
UNIT
V
A
A
mJ
A
V
°C
Revision: 11-Sep-13
1 Document Number: 89166
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VT2080C-E3
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
per diode
Reverse current per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 80 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.57
0.67
0.52
0.60
20
10
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
0.81
-
0.70
600
20
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT2080C VFT2080C
per diode
3.0 6.0
Typical thermal resistance
RJC
per device
2.0 5.0
VBT2080C
3.0
2.0
VIT2080C
3.0
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT2080C-E3/4W
1.88
ITO-220AB
VFT2080C-E3/4W
1.73
TO-263AB
VBT2080C-E3/4W
1.36
TO-263AB
VBT2080C-E3/8W
1.36
TO-262AA
VIT2080C-E3/4W
1.44
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
V(B,I)T2080C
16
VFT2080C
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
8
D = 0.5 D = 0.8
7 D = 0.3
6 D = 0.2
5 D = 0.1
4
3
D = 1.0
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-Sep-13
2 Document Number: 89166
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VI T2080C-E3 www.vishay.com Vishay Gener al Semiconductor Dual Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 52 V at IF = 5 A TO-220AB TMBS ® IT O-220AB VT2080C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT2080C PIN 1 PIN 2 PIN 3 TO-262AA K FEAT URES • Trench MOS Schottky technology • Low forward voltage drop, low powe r losses • High efficiency operation • Meets MSL level 1, per J-STD-020, L F maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 75 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: F or definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLI CATIONS For use in high frequency conve rters, switching power supplies, freewh eeling diodes, OR-ing diode, DC/DC conv erters and reverse battery protection. 2 1 VBT2080C PIN 1 K PIN 2 HEATSI NK VIT2080C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) V.
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