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TND308TD Dataheets PDF



Part Number TND308TD
Manufacturers Sanyo
Logo Sanyo
Description General Purpose Driver
Datasheet TND308TD DatasheetTND308TD Datasheet (PDF)

Ordering number : EN8150A TND308TD SANYO Semiconductors DATA SHEET ExPD (Excellent Power Device) TND308TD General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications Features • Dual buffer. • Monolithic structure(High voltage CMOS process adopted). • Withstand voltage of 25V is assured. • Wide range of operating voltage : 4.5V to 25V. • Peak output current : 1A. • Fast switching time(30ns typical at 1000pF load). • Fully compatib.

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Ordering number : EN8150A TND308TD SANYO Semiconductors DATA SHEET ExPD (Excellent Power Device) TND308TD General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications Features • Dual buffer. • Monolithic structure(High voltage CMOS process adopted). • Withstand voltage of 25V is assured. • Wide range of operating voltage : 4.5V to 25V. • Peak output current : 1A. • Fast switching time(30ns typical at 1000pF load). • Fully compatible input to TTL/CMOS (VIH=not more than 2.6V, at VDD=4.5 to 25V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDD VIN PD max Tj Tstg Conditions Recommended Operating Conditions at Ta=25°C Parameter Operating Supply Voltage Operating Temperature Symbol VDD Topr Conditions Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V Parameter Turn-On Rise Time Turn-Off Fall Time Delay Time Symbol tr tf tD1 tD2 CL=1000pF CL=1000pF CL=1000pF CL=1000pF Conditions min Ratings 0 to 25 GND--0.3 to VDD+0.3 0.25 --55 to +150 --55 to +150 Ratings 4.5 to 25 --40 to +125 Ratings typ 30 30 30 45 max 45 45 45 60 Unit V V W °C °C Unit V °C Unit ns ns ns ns Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 40506 MS IM TB-00002258 / 22805IP TS IM TB-00000364 No.8150-1/5 TND308TD Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V Parameter Logic “1” Input Voltage Logic “0” Input Voltage Input Bias Current High Level Output Voltage Low Level Output Voltage VDD Supply Current Output High Short Circuit Pulse Current Output Low Short Circuit Pulse Current Output On Resistance Symbol VIH VIL IIN VOH VOL Isupp IO+ IO-- ROUT Conditions VIN=0 or VDD IO=0 IO=0 VDD=10V, VIN=3V, (both inputs) VDD=10V, VIN=0, (both inputs) VDD=18V, PW≤10µs, VOUT=0 VDD=18V, PW≤10µs, VOUT=18V VDD=18V, Iload=10mA, VOUT=“H” VDD=18V, Iload=10mA, VOUT=“L” min 2.6 Ratings typ --1 VDD--0.1 1.0 1.0 1.0 8 6 max 0.8 1 0.1 4.5 0.2 12 10 Unit V V µA V V mA mA A A Ω Ω Package Dimensions unit : mm 7006A-006 3.0 85 0.125 0.5 6.4 4.5 0.95 0.05 1.0 0.425 0.95 14 0.25 0.65 Block Diagram VDD 1 : VDD 2 : INA 3 : GND 4 : INB 5 : NC 6 : OUTB 7 : OUTA 8 : VDD SANYO : TSSOP8 IN OUT GND No.8150-2/5 Switching Time Test Circuit VDD=18V TND308TD INPUT A INPUT B 4.7µF TND308TD 0.1µF OUTPUT A 1000pF OUTPUT B 1000pF INPUT RISE AND FALL +5V TIMES=5ns +0.4V 10% +18V NONINVERTING OUTPUT 0V tD1 10% tr INPUT 90% 90% tD2 90% 10% tf Turn-On Rise Time, tr -- ns tr -- Tc 50 VDD=18V VIN=5V 45 CL=1000pF 40 35 30 25 20 15 --50 0 50 100 150 Case Temperature, Tc -- °C IT05628 tf -- Tc 50 VDD=18V 45 VIN=5V CL=1000pF 40 35 30 25 20 15 --50 0 50 100 Case Temperature, Tc -- °C 150 IT05630 Turn-Off Fall Time, tf -- ns Turn-On Rise Time, tr -- ns tr -- VDD 70 VIN=5V CL=1000pF 60 50 40 30 20 10 0 5 10 15 20 25 30 Supply Voltage, VDD -- V IT05629 tf -- VDD 60 VIN=5V CL=1000pF 50 40 30 20 10 0 5 10 15 20 25 30 Supply Voltage, VDD -- V IT05631 No.8150-3/5 Turn-Off Fall Time, tf -- ns Delay Time, tD1 -- ns 50 45 40 35 30 25 20 15 10 --50 100 90 80 70 60 50 40 30 20 10 0 --50 1.4 1.2 tD1 -- Tc TND308TD VDD=18V VIN=5V CL=1000pF 50 45 40 Delay Time, tD1 -- ns 35 30 0 50 100 150 Case Temperature, Tc -- °C IT05632 tD2 -- Tc VDD=18V VIN=5V CL=1000pF 0 50 100 150 Case Temperature, Tc -- °C IO(+) -- Tc IT05634 VDD=18V Delay Time, tD2 -- ns 25 20 0 160 140 120 100 80 60 40 20 0 0 1.4 1.2 tD1 -- VDD VIN=5V CL=1000pF 5 10 15 20 25 30 Supply Voltage, VDD -- V tD2 -- VDD IT05633 VIN=5V CL=1000pF 5 10 15 20 25 30 Supply Voltage, VDD -- V IO(--) -- Tc IT08459 VDD=18V Delay Time, tD2 -- ns Output "Low" Short Circuit Pulse Current, IO(--) -- A Output "High" Short Circuit Pulse Current, IO(+) -- A 1.0 1.0 0.8 0.8 Allowable Power Dissipation, PD -- W 0.6 0.4 --50 0.30 0 50 100 Case Temperature, Tc -- °C PD -- Ta 150 IT05636 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 8.


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