Document
Ordering number : EN8150A
TND308TD
SANYO Semiconductors
DATA SHEET
ExPD (Excellent Power Device)
TND308TD General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive,
Switching Power Supply, and DC / DC Converter Applications
Features
• Dual buffer. • Monolithic structure(High voltage CMOS process adopted). • Withstand voltage of 25V is assured. • Wide range of operating voltage : 4.5V to 25V. • Peak output current : 1A. • Fast switching time(30ns typical at 1000pF load). • Fully compatible input to TTL/CMOS (VIH=not more than 2.6V, at VDD=4.5 to 25V).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDD VIN PD max Tj
Tstg
Conditions
Recommended Operating Conditions at Ta=25°C
Parameter Operating Supply Voltage Operating Temperature
Symbol VDD Topr
Conditions
Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V
Parameter
Turn-On Rise Time Turn-Off Fall Time
Delay Time
Symbol
tr tf tD1 tD2
CL=1000pF CL=1000pF CL=1000pF CL=1000pF
Conditions
min
Ratings 0 to 25
GND--0.3 to VDD+0.3 0.25
--55 to +150 --55 to +150
Ratings 4.5 to 25
--40 to +125
Ratings typ 30 30 30 45
max 45 45 45 60
Unit V V W °C °C
Unit V °C
Unit ns ns ns ns
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 40506 MS IM TB-00002258 / 22805IP TS IM TB-00000364 No.8150-1/5
TND308TD
Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V
Parameter
Logic “1” Input Voltage Logic “0” Input Voltage Input Bias Current High Level Output Voltage Low Level Output Voltage
VDD Supply Current
Output High Short Circuit Pulse Current Output Low Short Circuit Pulse Current
Output On Resistance
Symbol
VIH VIL IIN VOH VOL
Isupp
IO+ IO--
ROUT
Conditions
VIN=0 or VDD IO=0 IO=0 VDD=10V, VIN=3V, (both inputs) VDD=10V, VIN=0, (both inputs) VDD=18V, PW≤10µs, VOUT=0 VDD=18V, PW≤10µs, VOUT=18V VDD=18V, Iload=10mA, VOUT=“H” VDD=18V, Iload=10mA, VOUT=“L”
min 2.6
Ratings typ
--1 VDD--0.1
1.0
1.0 1.0
8 6
max
0.8 1
0.1 4.5 0.2
12 10
Unit
V V µA V V mA mA A A Ω Ω
Package Dimensions unit : mm 7006A-006
3.0 85
0.125
0.5
6.4 4.5 0.95
0.05 1.0 0.425 0.95
14 0.25
0.65
Block Diagram
VDD
1 : VDD 2 : INA 3 : GND 4 : INB 5 : NC 6 : OUTB 7 : OUTA 8 : VDD
SANYO : TSSOP8
IN OUT
GND
No.8150-2/5
Switching Time Test Circuit
VDD=18V
TND308TD
INPUT A INPUT B
4.7µF
TND308TD
0.1µF
OUTPUT A 1000pF OUTPUT B 1000pF
INPUT RISE AND FALL +5V TIMES=5ns
+0.4V
10%
+18V
NONINVERTING OUTPUT 0V
tD1
10% tr
INPUT 90%
90%
tD2 90%
10% tf
Turn-On Rise Time, tr -- ns
tr -- Tc
50
VDD=18V VIN=5V 45 CL=1000pF
40
35
30
25
20
15 --50
0
50 100 150
Case Temperature, Tc -- °C
IT05628
tf -- Tc
50
VDD=18V
45
VIN=5V CL=1000pF
40
35
30
25
20
15 --50
0 50 100
Case Temperature, Tc -- °C
150 IT05630
Turn-Off Fall Time, tf -- ns
Turn-On Rise Time, tr -- ns
tr -- VDD
70
VIN=5V CL=1000pF
60
50
40
30
20
10 0 5 10 15 20 25 30
Supply Voltage, VDD -- V
IT05629
tf -- VDD
60
VIN=5V
CL=1000pF
50
40
30
20
10 0 5 10 15 20 25 30
Supply Voltage, VDD -- V
IT05631
No.8150-3/5
Turn-Off Fall Time, tf -- ns
Delay Time, tD1 -- ns
50 45 40 35 30 25 20 15 10
--50
100 90 80 70 60 50 40 30 20 10 0 --50
1.4
1.2
tD1 -- Tc
TND308TD
VDD=18V VIN=5V CL=1000pF
50 45 40
Delay Time, tD1 -- ns
35
30
0 50 100 150
Case Temperature, Tc -- °C
IT05632
tD2 -- Tc
VDD=18V VIN=5V CL=1000pF
0 50 100 150
Case Temperature, Tc -- °C
IO(+) -- Tc
IT05634
VDD=18V
Delay Time, tD2 -- ns
25
20 0
160 140 120 100
80 60 40 20
0 0
1.4
1.2
tD1 -- VDD
VIN=5V CL=1000pF
5 10 15 20 25 30
Supply Voltage, VDD -- V
tD2 -- VDD
IT05633
VIN=5V CL=1000pF
5 10 15 20 25 30
Supply Voltage, VDD -- V
IO(--) -- Tc
IT08459
VDD=18V
Delay Time, tD2 -- ns
Output "Low" Short Circuit Pulse Current, IO(--) -- A
Output "High" Short Circuit Pulse Current, IO(+) -- A
1.0 1.0
0.8 0.8
Allowable Power Dissipation, PD -- W
0.6
0.4 --50
0.30
0 50 100
Case Temperature, Tc -- °C
PD -- Ta
150 IT05636
0.25
0.20
0.15
0.10
0.05
0 0 20 40 60 8.