GFP50N03

GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max. 0.154 (3.91) 0.142 (3.60)Dia. 0.113 (2.87) * 0.102 (2.56) 0.155 (3.93) D 0.134 (3.40) 0.410 (10.41) 0.350 (8.89) PIN G DS 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) G Features S Advanced Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.41) * May be notched or flat 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) VDS 30 VGS ±20 ID 50 Pulsed Drain Current IDM 100 Maximum Power Dissipation TC = 25°C TC = 100°C PD 62.5 25 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 Lead Temperature (1/8” from case for 5 se...