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DISCRETE SEMICONDUCTORS
DATA SHEET
BB156 Low-voltage variable capacitance diode
Product specification Supersedes data of 1998 Aug 17
2004 Mar 01
NXP Semiconductors
Low-voltage variable capacitance diode
Product specification
BB156
FEATURES Excellent linearity Very small plastic SMD package C7.5: 4.8 pF; ratio 3.3 Very low series resistance.
APPLICATIONS Voltage controlled oscillators (VCO).
DESCRIPTION The BB156 is a planar technology variable capacitance diode, in a SOD323 very small plastic SMD package.
PINNING
PIN 1 2
cathode anode
DESCRIPTION
12
sym008
Marking code: PF. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
TYPE NUMBER BB156
NAME
PACKAGE DESCRIPTION plastic surface mounted package; 2 leads
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR IF Tstg Tj
PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature
VERSION SOD323
MIN. 55 55
MAX. UNIT 10 V 20 mA +150 C +125 C
2004 Mar 01
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NXP Semiconductors
Low-voltage variable capacitance diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IR rs Cd
--C-----d------1----V----Cd 7.5 V
reverse current diode series resistance diode capacitance
capacitance ratio
VR = 10 V; see Fig.3 VR = 10 V; Tj = 85 C; see Fig.3 f = 470 MHz; Cd = 9 pF f = 1 MHz; see Figs 2 and 4
VR = 1 V VR = 4 V VR = 7.5 V f = 1 MHz
Product specification
BB156
MIN. TYP. MAX. UNIT 10 nA 200 nA 0.4 0.7
14.4 7.6 4.2 2.7
16 8.6 4.8 3.3
17.6 9.6 5.4 3.9
pF pF pF
2004 Mar 01
3
NXP Semiconductors
Low-voltage variable capacitance diode
Product specification
BB156
GRAPHICAL DATA
20
handbook, full pagewidth
Cd (pF)
16
MGR466
12
8
4
0 10−1 f = 1 MHz; Tj = 25 C.
1 10 VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
102
103 IR (nA)
102
10
mlc816
handboo1k0,
3 halfpage
TC d (K−1)
10 4
MBH583
1 0 20 40 60 80 100 Tj (°C)
Fig.3 Reverse current as a function of junction temperature; maximum values.
2004 Mar 01
10 5 10 1 1 10 VR (V) 102
Tj = 0 C to 85 C.
Fig.4 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
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NXP Semiconductors
Low-voltage variable capacitance diode
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
DA
Product specification
BB156
SOD323
E
X HD v M A
1
(1)
2
bp
A A1
detail X
Q
c Lp
01
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1 max
bp
c
D
E HD Lp Q
v
mm
1.1 0.8
0.05
0.40 0.25
0.25 0.10
1.8 1.6
1.35 1.15
2.7 2.3
0.45 0.25 0.15 0.15
0.2
Note 1. The marking bar indicates the cathode
OUTLINE VERSION
IEC
REFERENCES
JEDEC
JEITA
SOD323
SC-76
2 mm
EUROPEAN PROJECTION
ISSUE DATE
03-12-17 06-03-16
2004 Mar 01
5
NXP Semiconductors
Low-voltage variable capacitance diode
Product specification
BB156
DATA SHEET STATUS
DOCUMENT STATUS(1) Objective data sheet
Preliminary data sheet Product data sheet
PRODUCT STATUS(2) Development
Qualification Production
DEFINITION
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for .