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Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant
StrongIRFET™ IRL7472L1TRPbF
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ. max
@ VGS = 10V
RDS(on) typ.
max @ VGS = 4.5V ID (Silicon Limited)
40V 0.34m 0.59m 0.52m 0.97m 564A
D
S
S
S G
S
L8
S S
D S S
DirectFET™ ISOMETRIC
Base part number
Package Type
IRL7472L1PbF Direct FET Large Can (L8)
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRL7472L1TRPbF
RDS(on), Drain-to -Source On Resistance ( m) ID, Drain Current (A)
1.6 ID = 195A
1.4
1.2
1.0
0.8 TJ = 125°C 0.6
0.4
0.2 TJ = 25°C 0.0
2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
600 500 Limited by package
400
300
200
100
0 25
50 75 100 125 150 TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 25, 2015
IRL7472L1TRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM PD @TC = 25°C PD @TA = 25°C
Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor
VGS TJ TSTG
Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current EAR Repetitive Avalanche Energy
Max. 564
399
59
375
1500 341 3.8 0.025 ± 20 -55 to + 175
Units
A
A W
W/°C V °C
308 765
See Fig.15,16, 23a, 23b
mJ
A mJ
Thermal Resistance
Symbol
Parameter
RJA RJA RJA RJC RJA-PCB
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
V(BR)DSS/TJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Notes: Mounted on minimum footprint full size board with metalized
back an.