DatasheetsPDF.com

IRL7472L1TRPbF Dataheets PDF



Part Number IRL7472L1TRPbF
Manufacturers International Rectifier
Logo International Rectifier
Description N-Channel Power MOSFET
Datasheet IRL7472L1TRPbF DatasheetIRL7472L1TRPbF Datasheet (PDF)

Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/d.

  IRL7472L1TRPbF   IRL7472L1TRPbF



Document
Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant StrongIRFET™ IRL7472L1TRPbF DirectFET® N-Channel Power MOSFET  VDSS RDS(on) typ. max @ VGS = 10V RDS(on) typ. max @ VGS = 4.5V ID (Silicon Limited) 40V 0.34m 0.59m 0.52m 0.97m 564A   D S S S G S L8 S S D S S   DirectFET™ ISOMETRIC Base part number Package Type IRL7472L1PbF Direct FET Large Can (L8) Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRL7472L1TRPbF RDS(on), Drain-to -Source On Resistance ( m) ID, Drain Current (A) 1.6 ID = 195A 1.4 1.2 1.0 0.8 TJ = 125°C 0.6 0.4 0.2 TJ = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 600 500 Limited by package 400 300 200 100 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback February 25, 2015    IRL7472L1TRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM PD @TC = 25°C PD @TA = 25°C Pulsed Drain Current  Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy     Max. 564 399 59 375 1500 341 3.8 0.025 ± 20 -55 to + 175   Units A           A  W W/°C V °C    308 765 See Fig.15,16, 23a, 23b mJ A mJ Thermal Resistance Symbol Parameter RJA RJA RJA RJC RJA-PCB Junction-to-Ambient  Junction-to-Ambient  Junction-to-Ambient  Junction-to-Case  Junction-to-PCB Mounted Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Internal Gate Resistance Notes:  Mounted on minimum footprint full size board with metalized back an.


BYC5X-600 IRL7472L1TRPbF IRL7472L1PbF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)