IRLB3813PBF

PD - 97407 IRLB3813PbF Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 1.95mΩ@VGS = 10V 57nC D Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free G Gate DS G TO-220AB D Drain S Source Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter gRθJC Junction-to-Case RθCS RθJA Case-to-Sink, Flat Greased Surface fJunction-to-Ambient Notes  through † are on page 9 www.irf.com Max. 30 ± 20 h260 h190 1050 230 120 1.6 -55 to + 175 300 (1.6mm from case) x x10lb in (1.1N m) Units V A W W/°C °C Typ. ––– 0.50 ––– Max. 0.64 ––– 62 Units °C/W 1 07/03/09 IRLB3813PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drai...