IRLML5103PBF-1

VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -30 0.60 3.4 -0.76 V Ω nC A IRLML5103PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3™ Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRLML5103TRPbF-1 Package Type Micro3™ (SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML5103TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. -0.76 -0.61 -4.8 540 4.3 ± 20 -5.0 -55 to + 150 Units A mW mW/°C V V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient „ Typ. ––– Max. 230 Units °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 25, 2013 IRLML5103PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.029 ––– V/°C Reference to 25°C, ID = -1mA RDS(ON) Sta...