IRLML6302PBF-1

VDS RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 0.60 2.4 -0.78 V Ω nC A IRLML6302PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRLML6302TRPbF-1 Package Type Micro3™ (SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML6302TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient „ Max. -0.78 -0.62 -4.9 540 4.3 ± 12 -5.0 -55 to + 150 Units A mW mW/°C V V/ns °C Typ. ––– Max. 230 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014 IRLML6302PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -4.9 ––– mV/°C Reference to 25°C, ID = -1mA RDS(ON) S...