2N3440
Product Preview Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/368 Qualified • Available as JAN, JANTX...
2N3440
Product Preview Low Power
Transistor
NPN Silicon
Features
MIL−PRF−19500/368 Qualified Available as JAN, JANTX, and JANTXV Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
250
Collector −Base Voltage Emitter −Base Voltage
VCBO VEBO
300 7.0
Collector Current − Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C
PT 800
Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range
PT TJ, Tstg
5.0 −65 to +200
Unit Vdc Vdc Vdc Adc mW W °C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
175 °C/W
Thermal Resistance, Junction to Case
RqJC
30 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR 3
2 BASE
1 EMITTER
TO−39 CASE 205AB
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
2N3440
TO−39
Bulk
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. P1
1
Publication Order N...
