C5032

Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 500 500 400 7 6 3 1.2 30 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A A W ˚C ˚C +0.5 13.7–0.2 15.0±0.3 9.9±0.3 φ3.2±0.1 4.6±0.2 2.9±0.2 3.0±0.2 4.1±0.2 8.0±0.2 Solder Dip 1.2±0.15 1.45±0.15 2.6±0.1 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Emitter cutoff current ICBO IEBO VCB = 500V, IE = 0 VEB = 5V, IC = 0 100 µA 100 µA Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 V Forward current transfer ratio hFE1 hFE2 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A 10 8 40 Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.3A 1.0 V Base to emitter saturati...