ME4410B

N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON) ≦ 18 mΩ@VGS=10V ● RDS(ON) ≦ 30 mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load SwitchC ● LCD Display inverter e Ordering Information: ME4410B (Pb-free) ME4410B-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25℃ Current(Tj=150℃)* TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation* TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* Symbol VDSS VGSS ID IDM IS PD TJ RθJA *The device mounted on 1in2 FR4 board with 2 oz copper Rating 30 ±20 8.5 6.8 40 1.26 2.0 1....