SiHFPS40N60K

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 330 84 150 Single 0.110 D Super-247 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Enhanced Body Diode dV/dt Capability Compliant to RoHS Directive 2002/95/EC APPLICATIONS Hard Switching Primary or PFC Switch Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Motor Drive Super-247 IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, d...