4N70-S

UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary 4A, 700V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.2 Ω @VGS = 10 V, ID=2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 1 TO-252  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N70L-TN3-R 4N70G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-23.a 4N70-S Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 4A 16 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 135 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 49 W TJ +150 °С Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °С °С Notes: 1. Absolute maximum ratings are those values beyon...