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5N70K-MT Dataheets PDF



Part Number 5N70K-MT
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 5N70K-MT Datasheet5N70K-MT Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N70K-MT 5A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N70K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.

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UNISONIC TECHNOLOGIES CO., LTD 5N70K-MT 5A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N70K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.5 A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-B33.D 5N70K-MT  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N70KL-TA3-T 5N70KG-TA3-T 5N70KL-TF3-T 5N70KG-TF3-T 5N70KL-TF1-T 5N70KG-TF1-T 5N70KL-TF2-T 5N70KG-TF2-T 5N70KL-TF3-T 5N70KG-TF3-T 5N70KL-TM3-T 5N70KG-TM3-T 5N70KL-TMS-T 5N70KG-TMS-T 5N70KL-TMS2-T 5N70KG-TMS2-T 5N70KL-TMS4-T 5N70KG-TMS4-T 5N70KL-TN3-R 5N70KG-TN3-R 5N70KL-TND-R 5N70KG-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Power MOSFET Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel  MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-B33.D 5N70K-MT Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 5 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 5 A IDM 20 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 150 10 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 108 W TO-220F/TO-220F1 TO-220F3 36 W Power Dissipation TO-220F2 PD 38 W TO-251/TO-251S TO-251S2/TO-251S4 54 W TO-252/TO-252D Junction Temperature TJ +150 °C Operation Temperature TOPR -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=12mH, IAS=5A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-220F3 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D SYMBOL θJA θJC RATINGS 62.5 110 1.15 3.47 3.28 2.30 UNIT °C/W °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-B33.D 5N70K-MT Power MOSFET  ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250μA Drain-Source Leakage Current IDSS VDS =700V, VGS = 0V Gate-Source Leakage Current Forward Reverse IGSS VGS =30V, VDS = 0V VGS =-30V, VDS = 0V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID =250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2.5A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tR tD(OFF) tF QG QGS QGD VDD = 30V, ID =0.5A, RG = 25Ω (Note 1, 2) VDS = 50 V, ID = 1.3A, VGS = 10 V (Note 1, 2) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 5A Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 700 V 1 μA 100 -100 nA 0.6 V/°C 2.0 4.0 V 1.86 2.4 Ω 515 670 pF 55 72 pF 6.5 8.5 pF 50 ns 40 ns 180 ns 52 ns 18 23 nC 6.7 nC 3.9 nC 1.4 V 5A 20 A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-B33.D 5N70K-MT  TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + - + VDS - L RG VGS Same Type as D.U.T. Driver * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UN.


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