Document
UNISONIC TECHNOLOGIES CO., LTD
5N70K-MT
5A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 5N70K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.5 A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
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QW-R502-B33.D
5N70K-MT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N70KL-TA3-T
5N70KG-TA3-T
5N70KL-TF3-T
5N70KG-TF3-T
5N70KL-TF1-T
5N70KG-TF1-T
5N70KL-TF2-T
5N70KG-TF2-T
5N70KL-TF3-T
5N70KG-TF3-T
5N70KL-TM3-T
5N70KG-TM3-T
5N70KL-TMS-T
5N70KG-TMS-T
5N70KL-TMS2-T
5N70KG-TMS2-T
5N70KL-TMS4-T
5N70KG-TMS4-T
5N70KL-TN3-R
5N70KG-TN3-R
5N70KL-TND-R
5N70KG-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Power MOSFET
Package
TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel
MARKING
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QW-R502-B33.D
5N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage Avalanche Current (Note 2)
VGSS ±30 V IAR 5 A
Continuous Drain Current Pulsed Drain Current (Note 2)
ID 5 A IDM 20 A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
EAS EAR
150 10
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
TO-220
108 W
TO-220F/TO-220F1 TO-220F3
36 W
Power Dissipation
TO-220F2
PD
38 W
TO-251/TO-251S
TO-251S2/TO-251S4
54 W
TO-252/TO-252D
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX) 3. L=12mH, IAS=5A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3 TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL θJA
θJC
RATINGS 62.5
110 1.15 3.47 3.28 2.30
UNIT °C/W
°C/W °C/W °C/W °C/W °C/W
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QW-R502-B33.D
5N70K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0V, ID = 250μA
Drain-Source Leakage Current
IDSS VDS =700V, VGS = 0V
Gate-Source Leakage Current
Forward Reverse
IGSS
VGS =30V, VDS = 0V VGS =-30V, VDS = 0V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID =250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS =10V, ID = 2.5A
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS = 25V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tR
tD(OFF) tF QG
QGS QGD
VDD = 30V, ID =0.5A, RG = 25Ω (Note 1, 2)
VDS = 50 V, ID = 1.3A, VGS = 10 V (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 5A
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
700 V
1 μA
100 -100
nA
0.6 V/°C
2.0 4.0 V 1.86 2.4 Ω
515 670 pF 55 72 pF 6.5 8.5 pF
50 ns 40 ns 180 ns 52 ns 18 23 nC 6.7 nC 3.9 nC
1.4 V 5A
20 A
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www.unisonic.com.tw
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QW-R502-B33.D
5N70K-MT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ -
+ VDS -
L
RG
VGS
Same Type as D.U.T.
Driver
* dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test
VDD
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UN.