7NM65

UNISONIC TECHNOLOGIES CO., LTD 7NM65 Preliminary 7A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 7NM65 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 7NM65 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * Low drain-source on-resistance: RDS(ON) < 0.9 Ω (max.) by using Super Junction Structure * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7NM65L-TF3-T 7NM65G-TF3-T 7NM65L-TA3-T 7NM65G-TA3-T 7NM65L-TM3-T 7NM65G-TM3-T 7NM65L-TN3-R 7NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-042.b 7NM65  MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-042.b 7NM65 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 2 A Drain Current Cont...