7N90-MK6

UNISONIC TECHNOLOGIES CO., LTD 7N90-MK6 Preliminary 7A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90-MK6 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N90-MK6 is universally applied in active power factor correction, electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.  FEATURES * High switching speed * RDS(ON) <2.2Ω @ VGS=10V, ID=3.5A * 100% avalanche tested * Improved dv/dt capability  SYMBOL 1 Power MOSFET TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N90L-TA3-T 7N90G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-049.a 7N90-MK6 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Continuous Drain Current TC=25°C TC=100°C ID 7.0 A 4.4 A Pulsed Drain Current (Note 2) IDM 28 A Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns Power Dissipation PD 52 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes...