IGC109T120T6RH

IGC109T120T6RH IGBT4 High Power Chip Features: 1200V Trench + Field stop technology low VCE(sat) soft turn off positive temperature coefficient easy paralleling This chip is used for: medium / high power modules Applications: medium / high power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.48 x 14.61 4 x (2.761 x 6.458) 0.811 x 1.31 mm 2 109.3 / 82.6 140 µm 150 mm 90 grd 126 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1, 31.10 .2007 MAXIMUM RATINGS Parameter IGC109T120T6RH Symbol Value Unit Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax VC E IC 1200 1) V A Pulsed collector current, tp limited by Tjmax Ic p u l s 330 A Gate -Emitter voltage VGE ±20 V Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C Tj tp -40 ... +175 10 °C µs Reverse bias safe ...