IGBT
IGC18T120T6L
IGBT4 Low Power Chip
FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive t...
Description
IGC18T120T6L
IGBT4 Low Power Chip
FEATURES: 1200V Trench + Field Stop technology low switching losses positive temperature coefficient easy paralleling
This chip is used for: low / medium power modules
Applications: low / medium power drives
C G
E
Chip Type IGC18T120T6L
VCE ICn 1200V 15A
Die Size 4.16 x 4.34 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
4.16 x 4.34
2.652 x 2.246 1.185 x 0.702
mm 2
18.1 / 10.3
115 µm
150 mm
0 grd
822
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7633C, Edition 1, 31.10.2007
MAXIMUM RATINGS Parameter
IGC18T120T6L
Symbol
Value
Unit
Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax
VC E IC
1200
1)
V A
Pulsed collector current, tp limited by Tjmax
Ic p u l s
45 A
Gate -Emitter voltage
VGE
±20 V
Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
Tj tp
-40 ... +175 10
°C µs
Reverse bias safe operating area 2 ) (RBSOA) 1) depending on ther...
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