IGC136T170S8RH2

IGC136T170S8RH2 IGBT3 Power Chip Features:  1700V Trench & Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power modules Applications:  drives C G E Chip Type VCE ICn1 ) Die Size Package IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 17.72 x 7.7 See chip drawing 1.674 x 0.899 136.4 190 200 187 Photoimide 3200 nm AlSiCu Ni Ag –system mm2 µm mm Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags Al, <500µm  0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IPC TD VLS, L7804N, L7804U, L7804F, Edition 1.1, 27.06.2014 IGC136T170S8RH2 Maximum Ratings Parameter Symbol Collector-Emitter voltage, Tvj =25 C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max 2 ) I...